MF153500 - SEMI MF1535 - Test Method for Carrier Recombination Lifetime in Electronic-Grade Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance StdPbc-0918 The report is based on

The report is based on a supply-side market characterization of the photomask market

1  The scope of this Standard is automated material processing based on discrete processing jobs

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SEMI F104-0520 (technical revision)

Referenced SEMI Standards (purchase separately)

MF153500 - SEMI MF1535 - Test Method for Carrier Recombination Lifetime in Electronic-Grade Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance StdPbc-0918 The report is based onIf the free carrier density of an electronic grade semiconductor is not too high, the carrier recombination lifetime is controlled by impurity centers that have energies located in the forbidden energy gap. Many metallic impurities form such recombination centers in silicon. In most cases, very small densities of these impurities (1010 atoms cm3) reduce the carrier recombination lifetime and adversely affect device and circuit performance. Such