M06800 - SEMI M68 - Test Method for Determining Wafer Near-Edge Geometry from a Measured Height Data Array Using a Curvature Metric, ZDD StdPbc-0822 The source is normally a
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Description
The source is normally a polarized laser beam in combination with a high-contrast prism polarizer
1 The purpose of this Standard is to standardize requirements for grades of hydrochloric acid used in the semiconductor industry and testing procedures to support those specifications
is well known to be essential to many
1-1016 (technical revision)
org in November 2010
M06800 - SEMI M68 - Test Method for Determining Wafer Near-Edge Geometry from a Measured Height Data Array Using a Curvature Metric, ZDD StdPbc-0822 The source is normally aWafer near edge geometry can significantly affect the yield of semiconductor device processing. Knowledge of near edge geometrical properties can help the producer and consumer determine if the dimensional characteristics of a specimen wafer satisfy given geometrical requirements. The metric, ZDD, quantifies the near edge curvature of wafers used in semiconductor device processing. Consideration should be given to the use of this or other proposed
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