M07000 - SEMI M70 - Test Method for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site Flatness StdPbc-0912 Measurements made at the three

Measurements made at the three positions specified in this Guide do not provide complete information about the roundness of the wafer

The Guide focuses on analysis of HPIX resin used in UPW

and their customers in evaluating leadframe tapes

In addition to the interviews

SEMI MF951 — Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

M07000 - SEMI M70 - Test Method for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site Flatness StdPbc-0912 Measurements made at the threeWafer near edge geometry can significantly affect the yield of semiconductor device processing. Knowledge of near edge geometrical properties can help the producer and consumer to determine if the dimensional characteristics of a wafer satisfy given geometrical requirements. This Test Method is suitable quantifying the near edge geometry of wafers used in semiconductor device processing. The PSFQR or PSFQD metric is suitable for quantifying near edge