Flex Electronics Webinar Master Class Series: Power, AI, Integration, Reliability (On Demand) StdVol-Facilities Charged wafer and reticle surfaces

Charged wafer and reticle surfaces attract particles (electrostatic attraction [ESA]) and increase the defect rate

2 dichloroethylene for which a need has been identified

13-0303 (first published)

001% (m/m) and 1

1  The specification for epitaxial silicon wafers for discrete semiconductor device manufacture is specifically directed to silicon homoepitaxial deposits thicker than 25 µm on homogeneous silicon substrates or similar epitaxial wafers that are to be used to make discrete devices

Flex Electronics Webinar Master Class Series: Power, AI, Integration, Reliability (On Demand) StdVol-Facilities Charged wafer and reticle surfaces