MF152900 - SEMI MF1529 - Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure Revision:SEMI MF1529-1110 - Superseded

MF152900 - SEMI MF1529 - Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure Revision:SEMI MF1529-1110 - SupersededThe sheet resistance of epitaxial, implanted, diffused or deposited films is an important materials acceptance and process control parameter. The uniformity across a wafer of the sheet resistance resulting from any of these processes is important for the equivalence of performance of devices or circuits made from various regions of the wafer. This Test Method uses a four point probe in a manner different from that of other ASTM methods for the

3  Both test methods covered by this standard are applicable to all types of measured edge profiles on silicon wafers

SEMI C23-0714 (Reapproved 0620)

The purpose of this Document is to provide a guide for a grade of 25% tetramethylammonium hydroxide for which a need has been identified

Thermal decomposition temperature (see SEMI G75

SEMI D51 — Specification for Handshake Protocol of Single Substrate for Handling off/on Tool in FPD Production

3-1016 (Reapproved 0224)

6 — Standard for Phosphine (PH3) in Cylinders

SEMI E89等で網羅しており，統計的な考察を議論することは行わない。

1  The purpose of this Standard is to standardize requirements for 4

liquid crystal display [LCD]) is necessary

b and hue a*

The model specified in this Specification is used in conjunction with the Sensor/Actuator Network Common Device Model (CDM) to completely describe the VPG as it appears from the network interface