M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters StdPbc-1218 Determining the root cause of

Determining the root cause of TDDB results is beyond the scope of this Test Method

1 Ωcm for n-type silicon with minor changes in the measurement procedure

Promote an open standard to provide a portable and interoperable implementation

There is close alignment between this Guide and common specifications used for the purchase of silicon wafers

1  The purpose of this Standard is to standardize requirements for nitric acid used in the semiconductor industry and testing procedures to support those standards

M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters StdPbc-1218 Determining the root cause of1 Purpose 1. 1 Substrates with high electrical resistivity and electron drift mobility are needed to fabricate high performance digital and analog microelectronic devices and circuits. Semi insulating n type gallium arsenide, henceforth termed SI GaAs, has been established worldwide as a preferred substrate material for such applications. 1. 2 The active layers needed for devices are generated either by epitaxy or by ion implantation. The quality of