GaN Template on Sapphire, C plane,10x10 x0.5 mm , Film: 30 micron Thick Diamond on Silicon wafer Output dimension O

Output dimension O

Al/CPP       more than 5N/15mm

Outer nozzle: OD 1

Surface finish:  One side optical polished

which can maintain chemical powder during tube rotating

GaN Template on Sapphire, C plane,10x10 x0.5 mm , Film: 30 micron Thick Diamond on Silicon wafer Output dimension OGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate Specifications Sizes 10mmx10mm x0. 5mm Substrate Sapphire, Orientation C (0001) + 1. 0 o Conduction Type: n type, Resistivity < 0. 5 Ohm cm Front Surface Finish (Ga Face) As grown