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Si (110) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUe101005S1R1000 High-throughput Characterization & XRF Discharging: - 10 - 60
Si (110) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUe101005S1R1000 High-throughput Characterization & XRF Discharging: - 10 - 60
$17.52
Description
Discharging: - 10 - 60 oC (14 - 140 o F)
please choose our Digital Vacuum Gauge
the relative positive pressure level
05 to 380 mL/min adjustable
Material: 45# steel with Cr plated (all shinning parts) for anti-crossing
Si (110) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUe101005S1R1000 High-throughput Characterization & XRF Discharging: - 10 - 60Specifications: Single crystal: Si Conductive type: N typre, undoped Resistivity: > 1000 ohm cm Size: 10 x 10 x 0. 5 mm Orientation: (110) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUe101005S1R1000 High-throughput Characterization & XRF Discharging: - 10 - 60){kind=link}
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