Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 5-10 ohm-cm,25pcs/Pack Conductive Ceramic Substrates Dimensions

Dimensions

and ceramics

about 5 mm x 5 mm x 0

Growing Method:    Bridgman method

2C current

Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 5-10 ohm-cm,25pcs/Pack Conductive Ceramic Substrates DimensionsSilicon single crystal wafer (111) orientation 6" Diameter x (0. 65 0. 7) mm P type, boron doped Resistivity: 5 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) One side polished Packed in 25pcs group box Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater