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InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.35mm wafer, 1sp - IPZncA50D035C1US Orientation 100 05 to 380 mL/min Peristaltic
InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.35mm wafer, 1sp - IPZncA50D035C1US Orientation 100 05 to 380 mL/min Peristaltic
$457.12
Description
05 to 380 mL/min Peristaltic Pump
Active Material Proportion in Powder: 97
Edge : Raw Edge ( Scribe and Break)
Adhesive Layer (Carbon Black Mixed): 3
perovskite solar film
InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.35mm wafer, 1sp - IPZncA50D035C1US Orientation 100 05 to 380 mL/min PeristalticInP single crystal wafer Growing Method: VGF Orientation: (111)A Size: 2" diameter x (0. 3 0. 35) mm Doping: Zn doped Conducting type: S C P Polish: one side polished Resistivity:(3. 24 3. 29)x10^ 1 ohm. cm Mobility: 105 110 cm^2 V. S EPD: N A Carrier Concerntration:(1. 76 1. 81) x10^17 cm^3 Ra(Average Roughness) : <4 nm EPI ready surface and packing
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