LaF3 (100)ori. 7x7x0.5mm 2sp - LaF3a070705S2 Orientation 0001 Polishing: one side polished

Polishing:                         one side polished

Crystal Structure:                                cubic a = 6

Doping                                                                Ge

Sc doped GGG is  a good magneto-optical crystal and is excellent substrate for for growing bismuth-substituted iron garnet epitaxial films

voltage is 6V

LaF3 (100)ori. 7x7x0.5mm 2sp - LaF3a070705S2 Orientation 0001 Polishing: one side polishedSubstrate Specifications Size: 7x7x 0. 5mm + 0. 05mm Orientation: (100) + 1. 5 o Polish: Two sides EPI polished by CMP technology with less sub surface lattice damage. Surface roughness: < 5 A Pack: Packed in 100 grade plastic bag under 1000 class clean room. Typical Specifications Crystal Structure Trigonal: a= b= 7. 190 A, c=7. 367 A, alpha=beta =90o, gama =120o Growth Method Bridgman Melting Point 1493 oC Crystal Purity > 99. 9% Crystal growth