GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1 CdTe & CdZnTe/CZT Polished: Both sides polished

Polished:       Both  sides  polished

Roll Core Dimension

Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 8 A

005 wt%  Growth Method

Body Dimensions(W x L)

GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1 CdTe & CdZnTe/CZT Polished: Both sides polishedGaP single crystal wafer, Size: 2" diameter(+ _0. 15mm) x 0. 5mm(+ _ 0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)+_30' Edge Orientation: (110)1 Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or