Si wafer (100), 3 "dia x 0.1 mm, 1sp, P type, B doped, resistivities: 30-100 ohm-cm Max. current +6 A Epitaxial Film Thickness 40 nm

Epitaxial Film Thickness 40 nm +/- 10 nm Growth method Spin coating Epitaxial FWHM < 5 o

Cap Tab Length: 15mm

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Typical Impurity (ppm)

Disassembled coin cell cases by MSK-110D (click second picture below for details)

Si wafer (100), 3 "dia x 0.1 mm, 1sp, P type, B doped, resistivities: 30-100 ohm-cm Max. current +6 A Epitaxial Film Thickness 40 nmSingle crystal Si Conductivity: P type ( B doped) Resistivity: 30 100 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter Thickness: 0. 1 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw