VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp YSZ (Yittrium stabilized ZrO2) Surface Finish:Front side: Epi- polished

Surface Finish:Front side: Epi- polished Ra=0

the bottom cylinder (piston) in the cross-section illustration in the dimension section below Operation Temperature 10 - 40°C Dimensions

Removal Strength from Tab

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4cm Net Weight 2

VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp YSZ (Yittrium stabilized ZrO2) Surface Finish:Front side: Epi- polishedGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10x0. 625mm Polishing: one side polished Doping: Zn doped Conductor type: P type Carrier Concentration: (1. 3 2. 2) x 10^19 cm^3 Mobility: 64 75 cm^2 V. S EPD: <5000 cm^2 resistivity: (4. 5 6. 7)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces