Si Wafer (100), N type, P doped, 2" dia x 0.5 mm, 2SP, R:1-10 ohm.cm K Growing Method: LEC

Growing Method:            LEC

formation time

TYPE:                                      NH20-480*510-30

Speed accuracy: +/- 20 rpm

Polish: Two sides polished

Si Wafer (100), N type, P doped, 2" dia x 0.5 mm, 2SP, R:1-10 ohm.cm K Growing Method: LECSingle crystal Si Conductive type: N type, P doped, Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 2" diameter x 0. 5 mm Orientation: (100) Polish: Two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film