Ge Substrate: (100)+/- 2 degree, 10x5 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm Max. current +12 A Product Dimensions Click to enlarge

Product Dimensions  Click to enlarge

STANDARD PACKAGE:

Doping:                           Un- Doped

Please always heating the sample under a vacuum oven up to 100-120 °C to remove moisture before use for better results

Top Cap: 45

Ge Substrate: (100)+/- 2 degree, 10x5 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm Max. current +12 A Product Dimensions Click to enlargeGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 5 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100)+ 2 degree Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 10 15 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other