GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp Nano Polishing: two sides polished

Polishing:                          two sides polished

so never press the red or green button in this period

Pocket Size (mil): L60*W50*D28

Two types of zero diffraction plates are optional from the product option bar

crystal purity:  >99

GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp Nano Polishing: two sides polishedGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 5mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (5. 01 6. 30) x 10^17 cm^3 Mobility: 184 200cm^2 V. S EPD: <5000 cm^2 resistivity: (5. 14 6. 67)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces