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InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished Pyrolytic Graphite Substrate & Foam Edge: Hand Seam (< 0
InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished Pyrolytic Graphite Substrate & Foam Edge: Hand Seam (< 0
$114.42
Description
Edge: Hand Seam (< 0
Solvents and chemicals used for electrospinning may be poisonous
The lithium foil was packed in the dry room with < 10 PPM H2O
Crimping Load (kg)
<10-10> +/-0
InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished Pyrolytic Graphite Substrate & Foam Edge: Hand Seam (< 010x10x0. 45 mm InSb wafer (N type, Te doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (0. 19 0. 5)E18 @77K Mobility >(3. 58 5. 6)E4 cm2 Vs EPD <1200 1500 cm 2
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 10x10x 0.45 mm, N type, Te doped, 1 side polished Pyrolytic Graphite Substrate & Foam Edge: Hand Seam (< 0){kind=link}