InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp Hydrothermal Reactors

InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp Hydrothermal ReactorsInP single crystal wafer Orientation: (111)B Size: 2" diameter x 0. 35mm Doping: undoped Conducting type: N Type, Semi Conducting Resistivity: (2 5)E 1 ohm. cm Carrier Concentration:(3. 0 6. 0)E15 c. c. Mobility: 3900 4570cm^2 v. s Polish: one side polished Ra(Average Roughness) : < 0. 4 nm EPD: N A EPI ready surface and packing

you should firstly groove it by MSK-500 and then crimp it by MSK-510 with CR123 die

It can seal air-sensitive samples inside the glovebox and transport the sample to the outside glovebox through an antechamber or seals the sample from the outside glovebox by vacuum pump to put it into the glovebox through the antechamber air chamber

Res: 1-10 ohm-cm

9   mpa   Compressive Strength 18500   psi 127

Orientation:                 (111) A +/-1 degree

Easy to cut by steel knife and make various shape 's thermal insulation

The bare wire can be connected to the C type 1/4"OD x 20" Length thermocouple

78) x 10^18/cm^3

Case: 48 mm x 173 mm x 115 mm H

and steel pipe

After perfectly crimping

Growing Method:               VGF