45 ohm.cm Microwave Cu Metallic Substrate ( polycrystalline)Ge Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: two sides epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5."> 45 ohm.cm Microwave Cu Metallic Substrate ( polycrystalline)"> 45 ohm.cm Microwave Cu Metallic Substrate ( polycrystalline)Ge Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: two sides epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5."> 45 ohm.cm Microwave Cu Metallic Substrate ( polycrystalline)"> 45 ohm.cm Microwave Cu Metallic Substrate ( polycrystalline)Ge Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: two sides epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5."> Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 2SP, Resistivities: > 45 ohm.cm Microwave Cu Metallic Substrate ( polycrystalline) – mrscleanmckinney.com

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Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 2SP, Resistivities: > 45 ohm.cm Microwave Cu Metallic Substrate ( polycrystalline)

$132.22

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45 ohm.cm Microwave Cu Metallic Substrate ( polycrystalline)">
Description

Cu Metallic Substrate ( polycrystalline)

Size:      10x10x0

Each set includes 4 types of cutting ring at 8

MSK-HRP-01

4")  1 LSS006 One Pair of Blade Clams

Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 2SP, Resistivities: > 45 ohm.cm Microwave Cu Metallic Substrate ( polycrystalline)Ge Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: two sides epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.

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