Boron-Doped Diamond on Silicon Substrate Orientation 10-10 It can prevent precision wafer

It can prevent precision wafer or substrate from damage and contamination during shipping and storage

Please click here to see Dislocation vs Thickness of GaN template

Standard diameter that can be put inside: 19mm Diameter Max

Working Voltage 110 or 220V AC

ensuring precise and real temperature reading from inside the cell

Boron-Doped Diamond on Silicon Substrate Orientation 10-10 It can prevent precision waferA Boron Doped Diamond (BDD) on Silicon Substrate (Si) is a high performance material that combines the excellent properties of diamond with the versatility of silicon. The substrate consists of a conductive silicon wafer that is coated with a thin layer of boron doped diamond. Boron doping introduces p type conductivity to the diamond layer, enhancing its electrical properties and making it suitable for use in electrochemical applications. This