LaAlO3, (100) Ori. 0.5" x1.0mm wafer 1 SP Dry Room Capacity at 1C Divided by

Capacity at 1C Divided by Capacity at 0

Gd3Ga5O12 single crystal

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LaAlO3, (100) Ori. 0.5" x1.0mm wafer 1 SP Dry Room Capacity at 1C Divided byLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 0. 5" dia + 0. 5 mm x 1. 0 thickness + 0. 05 mm Wafer Orientation: (100)