Al2O3- Sapphire Wafe, R Plane, 5x5x0.5mm, 1SP - ALR050505S1 IC Tray Boxes Growth Technique: CZ

Growth Technique: CZ

Impurity:          Impurity REO<0

Nano Powder A - Z

Thermal Expansion:    7

which is designed for using under magnetic field without blocking magnetic strength

Al2O3- Sapphire Wafe, R Plane, 5x5x0.5mm, 1SP - ALR050505S1 IC Tray Boxes Growth Technique: CZFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 5 mm x 5 mm x 0. 5 mm thick Orientation tolerance: + 0. 5 Deg. R plane orientation Polished surface: Substrate surface is EPI polished via a special CMP procedure with Ra < 5 A 1 side polished Package: Each wafer is packed in 1000 class clean room with