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InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La To use outside the glove
InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La To use outside the glove
$126.50
Description
To use outside the glove box
PTC Thermistor will break the current when heated to 120ºC
Transmittance of ITO glass: > 83%
Mass resistivity: 0
e c = 60 (clamped)
InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La To use outside the gloveGrowth method LEC Orientation (411) 0. 5 Deg Orientation Flat N A Doping S doped Conductivity type N type Carrier Concentration <7E17 ~ 1E18 cm3 Mobility >10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side
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