LaAlO3, (100) orn. 1"x 1" x 0.5mm substrate , 2 side epi polished - LAOa252505S2US Diamond on Silicon wafer Surface Roughness: < 10A

Surface Roughness:  < 10A

535 cycles

One pair of spare carbon brush is included for a replacement if the high-speed motor stop working

Li2CO3 (%) 0

It is designed to coat multi-composition material in one time with high throughput

LaAlO3, (100) orn. 1"x 1" x 0.5mm substrate , 2 side epi polished - LAOa252505S2US Diamond on Silicon wafer Surface Roughness: < 10ALaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 1'' x 1'' x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0.