+ 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms, Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ crystal purity: >99."> + 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms, Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ crystal purity: >99."> + 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms, Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ crystal purity: >99."> Al2O3- Sapphire Wafer, M Plane 2"Dia x0.5 mm wafer, 1SP Crucibles A built-in travel rod of – mrscleanmckinney.com

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Al2O3- Sapphire Wafer, M Plane 2"Dia x0.5 mm wafer, 1SP Crucibles A built-in travel rod of

$100.62

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Description

A built-in travel rod of the coater with the digital micrometer head to adjust the gap between slot die and substrate Pic

The milling machine must be placed on solid flat ground to avoid damage

Thermal Expansion: 7

1mm Weight 2

06 @ 0 oC   25

Al2O3- Sapphire Wafer, M Plane 2"Dia x0.5 mm wafer, 1SP Crucibles A built-in travel rod ofSpecifications: Orientation: M <10 10> + 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms, Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ crystal purity: >99.

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