GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5 Fuse Orientation: C-axis[0001] +-0

Orientation: C-axis[0001] +-0

PRIME Grade

One plastic cover is included for protection

Orientation:                  (111)

Various optional jars and balls are listed below

GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5 Fuse Orientation: C-axis[0001] +-0GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 4" dia x 0. 625 mm Polishing: two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (1. 47 3. 78) x 10^18 cm^3 Mobility: (1600 2130) cm^2 V. S Resistivity: (1. 03 2. 01) E 3 ohm. cm EPD: < 5000cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces