Al2O3 - Sapphire Wafer, (10-14), 10x10x0.5mm, 1 SP - AL1014ori101005S1 High-Throughput Coating 3 seconds heating time

3 seconds heating time

Target  A-Z

Negative case (the top part with insulating O-ring

Maximum power: 6 kW

Crystal Structure:  Hexagonal

Al2O3 - Sapphire Wafer, (10-14), 10x10x0.5mm, 1 SP - AL1014ori101005S1 High-Throughput Coating 3 seconds heating timeFearures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 10 x 10 x 0. 5 mm thick Orientation: (10 14) + 0. 5o Polished surface: Substrate surface is EPI polished via a special CMP procedure with RA < 5 A 1 side polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with