GSGG - Gd3Sc2Ga3O12- ( 111) orn. 10x10x0.5mm, 2sp Diamond on Silicon wafer 1650°C (in N2)

1650°C (in N2)

Melting point

With additional certification fees

For the operation outside the glove box

Polishing:                 one side polished

GSGG - Gd3Sc2Ga3O12- ( 111) orn. 10x10x0.5mm, 2sp Diamond on Silicon wafer 1650°C (in N2)Sc doped GGG single crystal, e. g. substituted gadolinium gallium garnet is grown by CZ method . Sc doped GGG is a good magneto optical crystal and is excellent substrate for for growing bismuth substituted iron garnet epitaxial films Composition: Gd3Sc2Ga3O12 Size: 10 mm x 10 mm x 0. 5 mm Orientation: (111) + 0. 5 Polish: Two sides EPI polished Surface Roughness: < 10A by AFM 5x5 microm area Composition Gd3Sc2Ga3O12 Crystal Structure Cubic: a =12.