Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick Al2O3 (Sapphire) working temperature 1700 °C (3092°F)

working temperature 1700 °C (3092°F) Warning Do NOT use an alumina tube under a vacuum at a temperature > 1500°C

Maximum Working Temperature

5) with advantages of higher energy density and lower cost

This furnace module (liner&heating elements inside) is designed for easy replacement of the KSL-1200X-UL liner and heating elements

Gas Pressure

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick Al2O3 (Sapphire) working temperature 1700 °C (3092°F)Silicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation. U. S. Dept. of Commerce requires End User Certificate for