Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials Ingestion-build-54484 and/or turbulence effects

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b) methods based on measurement of stable isotopic ratio

mapping the legal and the technical concepts

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Large or industrial grade machine manufacturers

Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials Ingestion-build-54484 and/or turbulence effects1 Scope This International Standard specifies a secondary ion mass spectrometric method for the determination of boron atomic concentration in single crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 1016 atoms cm3 to 1 1020 atoms cm3.