50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Specification Material Aluminum 99Ge Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other"> 50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Specification Material Aluminum 99"> 50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Specification Material Aluminum 99Ge Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other"> 50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Specification Material Aluminum 99"> 50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Specification Material Aluminum 99Ge Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other"> Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Specification Material Aluminum 99 – mrscleanmckinney.com

New Arrivals are Here-Fast Shipping from Our USA Warehouse

Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Specification Material Aluminum 99

$212.72

Quantity
50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Specification Material Aluminum 99">
Description

Specification Material Aluminum 99

Graphite Felt (up to 2200ºC ) for Induction Heating system

High torque 110VDC motor (70W Max

reversible

Wafer Size: 5x5x0

Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Specification Material Aluminum 99Ge Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other

Shipping Notes
  • Free Standard Shipping on $100+ Orders to the USA.
  • Except Preorder products are shipped in 48 hours.
  • Delivery to the USA:
  1. Standard Shipping : 3-10 business days
  • If time is of the essence, please consider selecting expedited delivery for faster service.

View More

  • Product more
  • Collection:

You may also like

recommand products

50$ Store Credit
Your message