Ge Substrate: (100)+/- 2 degree, 10x3 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm CdTe Doped Zn (CZT) Shiny Side Roughness (RA): 0

Shiny Side Roughness (RA):   0

30 mm Thickness Density

Please use a fabric cloth to wipe out the residues that remain in the bow/base

Please store moisture-sensitive consumables in the vacuum storage box

Resistivity:                  0

Ge Substrate: (100)+/- 2 degree, 10x3 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm CdTe Doped Zn (CZT) Shiny Side Roughness (RA): 0Ge Wafer Specification Growing Method: CZ Wafer Size: 10 x 3 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100)+ 2 degree Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 10 15 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other