45 ohm-cm Applicators Make wet film thickness betweenGe Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: one side epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5."> 45 ohm-cm Applicators Make wet film thickness between"> 45 ohm-cm Applicators Make wet film thickness betweenGe Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: one side epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5."> 45 ohm-cm Applicators Make wet film thickness between"> 45 ohm-cm Applicators Make wet film thickness betweenGe Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: one side epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5."> Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm Applicators Make wet film thickness between – mrscleanmckinney.com

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Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm Applicators Make wet film thickness between

$126.47

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45 ohm-cm Applicators Make wet film thickness between">
Description

Make wet film thickness between 10 - 5000 microns

Here are the tips: Long press to increase the value

TE-DHG-9015-TA is designed for the battery thermal abuse test for IEC62133-8

2mm Optional  Please click the picture below to order Al spacer and spring Application Excellent for developing new Li-ion rechargeable batteries up to 5

Bending Strength:

Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm Applicators Make wet film thickness betweenGe Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: one side epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.

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