GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3 DyScO3 Specific Surface Area: 1

Specific Surface Area: 1

65535 cycles

A plane (11-20)  sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch

09   g/cm3

Low defect densities

GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3 DyScO3 Specific Surface Area: 1High quality GaSb single crystal wafers for semiconductor industries. Size: 2" diameter x 0. 45mm, Orientation: (100) Dopping: Zn doped, Conducting type: P type. Carrier concentration:(1 3)x10^17 cm^ 3 EPD: < 10^4 cm ^ 2 Mobility: 200 500 cm^2 V. S Polish: one side polished. Grown by a special LEC technique Surface finish (RMS or Ra) : < 5A Typical Properties Crystal Structure: cubic a = 6. 095 Density: 5. 619 g cm3 Melting point: 710 oC Thermal