GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp Feeders

GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp FeedersGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow <5

Resistivity:                     10-15  Ohm

Growing Method:                 VGF

One pack of 48173 accessories

} Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

Anti-explosion Port:

5 ×10-4 S/cm at 25 Room Temperature

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Since June 3

Model EQ-Die-75D Die Sleeve Height 2 3/8" (60 mm) Inner Diameter 3" (76

Multiple battery analyzers can be connected to 1 PC via an ethernet switch ($100

Polishing:  Two sides polished

998 alumina tube proves inert to carbon and refractory metals in many severe situations: