GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2 Diamond on Silicon wafer 80% (average hole diameter is

80% (average hole diameter is ~0

Thermal Conductivity:       640

Please use quartz or alumina crucible to carry the sample

Made of high quality PTFE materials for minimizing electrolyte corrosion and allowing easy clean ups for repeated use

LiCoO2 (LCO) electrode sheet

GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2 Diamond on Silicon wafer 80% (average hole diameter isGaP single crystal wafer, Size: 10mm x 10 mm x 0. 35 mm, Doping: undoped, Conducting type: N type, Orientation: (111) Polished: Two sides Surface finish (RMS or Ra) :: < 8A price is for one piece Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100> or <111> Conducting Type N N Carrier