Si Wafer (110) 2" dia x 0.5 mm, 1SP, P type, B doped,R:1-10 ohm-cm LiNbO3 Thickness 16 +/- 1

Thickness 16 +/- 1

Structure:                         Cubic

(0001) C plane orientation ( +-0

Tooth Number

after coating

Si Wafer (110) 2" dia x 0.5 mm, 1SP, P type, B doped,R:1-10 ohm-cm LiNbO3 Thickness 16 +/- 1Single crystal Silicon Conductive type: P type Boron doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (110) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner