Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 2SP,R>50ohm.cm - GEUe101D05C2R50US Battery R&D

Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 2SP,R>50ohm.cm - GEUe101D05C2R50US Battery R&DGe Wafer Specification Growing Method: CZ Orientation: (110) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: two sides epi polished Surface roughness: < 30 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal Structure:

please read these instructions carefully before installation and before using it for the first time

Structure:                             Cubic

Please click pictures below to find Gold coated spacer and wave spring

Thickness of Ta diffusion barrier: 20-50 nm

Polishing:                         single  side  polished

Loading Current: 3A

Ball mill or ground the powder to the size of 32~75 microns powder before pressing

125 mm (+/-0

Complete Package includes

you can add an ingredient in a certain weight ratio to a mixed solution

For anti-corrosion and high-temperature lubricant

Please keep the powder in a vacuum box to avoid moisture