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Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10 La(x)Sr(1-x)MnO3 Dimension: 72 mm width x
Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10 La(x)Sr(1-x)MnO3 Dimension: 72 mm width x
$67.58
Description
Dimension: 72 mm width x 105 mm L x 0
Major structural material: Cr Plated Steel
Used for DHG-9070 serious Gravity Convection Oven
Elongation Rate (HT): 5
Biaxially Oriented Nylon (ONy)
Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10 La(x)Sr(1-x)MnO3 Dimension: 72 mm width xSingle crystal Si Conductivity: N type ( P doped) Resistivity: 10 30ohm CM Size: 3" diameter x 0. 5 mm Orientation: (100) 4 Deg. Off Toward (110) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
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