GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp, Dispensers & Feeders Macro Defect Density <=5 cm-2

Macro Defect Density        <=5 cm-2

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GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp, Dispensers & Feeders Macro Defect Density <=5 cm-2GaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 2" dia x 0. 5mm Polishing: one side polished Doping: undoped, Conductor type: SI ( semi insulating Carrier Concentration: N A Mobility: 3710 6230cm^2 V. S EPD: N A Resistivity:(0. 2 5. 5)E8 ohm. cm Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces