GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp Wafer Holders 5 Deg) with Standard Flat

5 Deg) with Standard Flat

Two sides polished

3" Stainless steel sieve ( two-layer ) 3" sieve ( two layers)

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Independent temp inputs

GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp Wafer Holders 5 Deg) with Standard FlatGaP single crystal wafer, Size: 48 mm in diameter x 0. 25mm, Doping: S doped Conducting type: N type, Orientation: (100) 2 degree OFF toward [101] + 0. 5 deg Polished: one side Surface finish (RMS or Ra) : < 8A Carrier Concentration: (0. 25 ~ 2. 0 ) E18 cm^3 Risistivities: 0. 185 ohm cm Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC