GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp Fuse 2500 ~ 3500
$327.18
Description
2500 ~ 3500
Built-in PTFE slurry slot with 180mm coating width to make coating material evenly distributed ahead of the blade
you must check the substrate by XRD before growing the film
FKM is also suitable for high vacuum applications
LiCoO2 (LCO) electrode sheet
GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp Fuse 2500 ~ 3500GaP single crystal wafer, Size: 2" diameter(0. 15mm) x 0. 45mm(0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)30' Edge Orientation: (110)1 Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100>
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