Thermal Oxide Wafer, 30 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type, As-doped, 1 side polished, R:<0.005 ohm.cm Dy Crystalgrowth method: Top seed flux

Crystalgrowth method:                                         Top seed flux growth

Resistivity:               <0

Polish:                   Two sides polished

Cutting Machine with power cord

Thickness:650+/- 25um

Thermal Oxide Wafer, 30 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type, As-doped, 1 side polished, R:<0.005 ohm.cm Dy Crystalgrowth method: Top seed fluxThermal oxide Layer Research Grade, about 80 % useful area SiO2 layer on 2" Silicon wafer Oxide layer thickness: 30 nm ( 300A) + 10% Refractive index: 1. 455 Silicon Wafer Specifications: Conductive type: N type As doped Resistivity: <0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 50 + 0. 025 mm Orientation: (100) + 1o