A Polishing: one side polishd Resistivities: 5. 1x10^ 2 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (111) A Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 6. 4E17 cm3 Mobility 192 cm2 V. S Resistivity 5. 1x10^ 2 Ohm Cm EPD 1. 9E4 cm 2 Related"> A Polishing: one side polishd Resistivities: 5. 1x10^ 2 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (111) A Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 6. 4E17 cm3 Mobility 192 cm2 V. S Resistivity 5. 1x10^ 2 Ohm Cm EPD 1. 9E4 cm 2 Related"> A Polishing: one side polishd Resistivities: 5. 1x10^ 2 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (111) A Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 6. 4E17 cm3 Mobility 192 cm2 V. S Resistivity 5. 1x10^ 2 Ohm Cm EPD 1. 9E4 cm 2 Related"> InAs (111)A, P Type, Zn doped 2" dia x 0.45 mm, one side polished W Specifications of the Substrate – mrscleanmckinney.com

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InAs (111)A, P Type, Zn doped 2" dia x 0.45 mm, one side polished W Specifications of the Substrate

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Specifications of the Substrate

Doping:                                 Sb doped

Application Notes For In-situ Laser Raman Spectroscopy

YSZ Ceramic Substrate  ( Polycrystaline ceramic of 8% Yittrium stablized ZrO2)

Compatible Machine

InAs (111)A, P Type, Zn doped 2" dia x 0.45 mm, one side polished W Specifications of the Substrate2" InAs wafer (P type) 2" InAs wafer P Type, Zn doped Size: 2" dia x 450 micron + 20 microns Orientation: <111>A Polishing: one side polishd Resistivities: 5. 1x10^ 2 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (111) A Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 6. 4E17 cm3 Mobility 192 cm2 V. S Resistivity 5. 1x10^ 2 Ohm Cm EPD 1. 9E4 cm 2 Related

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