Si Wafer (111), 2" dia x 0.5 mm, 1SP, N type, P doped,R:1-10 ohm.cm Silicon-Nitride on Corning 7980 Refractive Index ho = 2

Refractive Index                 ho = 2

EPD:                                <5000cm^2

Curie Temperature

Ra(Average Roughness) : < 0

Surface:          as cut

Si Wafer (111), 2" dia x 0.5 mm, 1SP, N type, P doped,R:1-10 ohm.cm Silicon-Nitride on Corning 7980 Refractive Index ho = 2Single crystal Silicon Conductive type: N type P doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (111) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer