50 ohm.cm - GEUc50D05C1R50US Orientation 111A Please bake the powder inGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Finish(RMS or Ra): one side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resstivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 Density:"> 50 ohm.cm - GEUc50D05C1R50US Orientation 111A Please bake the powder in"> 50 ohm.cm - GEUc50D05C1R50US Orientation 111A Please bake the powder inGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Finish(RMS or Ra): one side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resstivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 Density:"> 50 ohm.cm - GEUc50D05C1R50US Orientation 111A Please bake the powder in"> 50 ohm.cm - GEUc50D05C1R50US Orientation 111A Please bake the powder inGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Finish(RMS or Ra): one side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resstivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 Density:"> Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US Orientation 111A Please bake the powder in – mrscleanmckinney.com

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Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US Orientation 111A Please bake the powder in

$131.68

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50 ohm.cm - GEUc50D05C1R50US Orientation 111A Please bake the powder in">
Description

Please bake the powder in a vacuum oven at 120 - 150 °C before making slurry and coating to ensure max

4MPa (the cap valve will open to release interior high pressure if over 2

KSL-MW-XX is an economic microwave box furnace

EPD                                               <3000 cm^-2

Overall dimension: 68"W x 32"D x 57"H

Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US Orientation 111A Please bake the powder inGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Finish(RMS or Ra): one side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resstivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 Density:

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