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SGGG - Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12, (111), 5x5x0.5mm, 1sp InGaAs EPI on InP Size: 2" dia x 0
SGGG - Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12, (111), 5x5x0.5mm, 1sp InGaAs EPI on InP Size: 2" dia x 0
$121.76
Description
Size: 2" dia x 0
Conduction Type: Undoped (N-) and resistivities: < 0
Material Nickel bounded Stainless Steel
Size: 10mm x 10mm x 1
Typical Properties ChemicalComposition:
SGGG - Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12, (111), 5x5x0.5mm, 1sp InGaAs EPI on InP Size: 2" dia x 0SGGG single crystal, e. g. substituted gadolinium gallium garnet is grown by CZ method . SGGG substrate is excellent for for growing bismuth substituted iron garnet epitaxial films Composition: Gd2. 6Ca0. 4)Ga4. 1Mg0. 25Zr0. 65O12 Size: 5 mm x 5 mm x 0. 5 mm Orientation: (111) + 0. 5 Polish: one side EPI polished Surface Roughness: < 10A by AFM 5x5 microm area Physical Properties of SGGG Composition Gd2. 6Ca0. 4)Ga4. 1Mg0. 25Zr0. 65O12 Crystal
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