50 ohm.cm Al2O3 Sample Plate Note: EPI ready wafersGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> 50 ohm.cm Al2O3 Sample Plate Note: EPI ready wafers"> 50 ohm.cm Al2O3 Sample Plate Note: EPI ready wafersGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> 50 ohm.cm Al2O3 Sample Plate Note: EPI ready wafers"> 50 ohm.cm Al2O3 Sample Plate Note: EPI ready wafersGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm Al2O3 Sample Plate Note: EPI ready wafers – mrscleanmckinney.com

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Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm Al2O3 Sample Plate Note: EPI ready wafers

$125.35

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50 ohm.cm Al2O3 Sample Plate Note: EPI ready wafers">
Description

Note:  EPI ready wafers

Recommend to use a torque wrench when tightening the top plunger for good electrical contact and repeatability ( click Pic 1 to order )

Top and bottom insulating spacers are made of nylon

Option 2PCS 50mm sealing gasket for Stainless Steel Jar of milling machine (80ml) - MTI-PJ-ACC#03

Titanium adhesion layer thickness: 15 nm

Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm Al2O3 Sample Plate Note: EPI ready wafersGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A

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