GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP CdTe Doped Zn (CZT) and Li half-cell testing

and Li half-cell testing

Crystal Substrate A-Z

Temperature Controller (Optional)

Specifications: (RoHS Compliant

(For 208~240V power supply

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP CdTe Doped Zn (CZT) and Li half-cell testingGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 5mm Polishing: one side polished Doping: undoped Conductor type: Semi Insulating Resistivity: (1. 35 4. 21)x10^8Ohm. cm Mobility: 4360 5640cm^2 V. S EPD: <5000cm^ 2 Primary Flat: EJ(0 1 1) Secondary Flat: EJ(0 11) Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces